FGH30N60LSD Fairchild Semiconductor, FGH30N60LSD Datasheet - Page 6

• Manufacturer Part Number: FGH30N60LSD
• Description: IGBT Transistors 1.1V 30A High Speed
• Manufacturer: Fairchild Semiconductor

Specifications of FGH30N60LSD

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH30N60LSD Rev. A2
Typical Performance Characteristics
Figure 13. Turn-Off Characteristics vs.
Figure 17.Switching Loss vs Collector Current
Figure 15. Turn-Off Characteristics vs.
1000
3000
1000
6000
100
100
100
0.1
10
1
10
0
Gate Resistance
20
Collector Current
20
10
30
Gate Resistance, R
Collector Current, I
Collector Current, I
30
t
d(off)
t
f
t
d(off)
40
20
t
40
f
50
Common Emitter
V
I
T
T
50
C
30
C
C
CC
Common Emitter
V
T
T
Common Emitter
V
T
T
= 30A
GE
C
C
C
C
= 25
= 125
G
GE
60
= 400V, V
= 25
= 125
= 25
= 125
C
[ Ω ]
= 15V, R
C
= 15V, R
[A]
o
[A]
C
o
60
o
o
C
C
o
C
o
C
C
40
70
E
E
GE
on
G
off
G
= 6.8
70
= 6.8
= 15V
80
Ω
Ω
50
80
(Continued)
6
Figure 16. Switching Loss vs
Figure 18. Turn-Off Switching
Figure 14. Turn-On Characteristics vs.
100
500
500
100
200
100
10
10
10
1
1
20
5
Common Emitter
V
T
T
Common Emitter
V
I
T
T
C
C
C
GE
CC
C
C
= 30A
= 25
= 125
1
= 25
= 125
10
Safe Operating Area
V
= 15V, R
Gate Resistance
= 400V, V
GE
30
SOA Characteristics
Collector Current
Collector-Emitter Voltage, V
o
o
= 15V, T
C
o
C
o
15
C
C
Collector Current, I
Gate Resistance, R
G
GE
= 6.8
40
20
C
= 15V
10
= 125
Ω
25
o
C
50
30
100
C
35
60
G
[A]
[ Ω ]
E
on
E
off
CE
40
[V]
70
t
d(on)
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45
t
1000
r
50
80