FGH30N60LSD Fairchild Semiconductor, FGH30N60LSD Datasheet - Page 3

• Manufacturer Part Number: FGH30N60LSD
• Description: IGBT Transistors 1.1V 30A High Speed
• Manufacturer: Fairchild Semiconductor

Specifications of FGH30N60LSD

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH30N60LSD Rev. A2
Electrical Characteristics of the Diode
V
I
t
t
t
Q
RM
rr
a
b
FM
rr
Parameter
I
I
V
I
I
I
F
F
F
F
F
R
= 15A
= 15A
=1A, di/dt = 100A/µs, V
=15A, di/dt = 100A/µs, V
=15A, di/dt = 100A/µs, V
= 600V
Conditions
CC
CC
CC
= 30V
= 390V
= 390V
T
C
= 25°C unless otherwise noted
3
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
= 25 °C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Min.
-
-
-
-
-
-
-
-
Typ.
27.5
1.8
1.6
18
13
-
-
-
Max
100
2.2
35
40
-
-
-
-
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Units
µA
nC
ns
ns
ns
ns
V
V