FMM6G50US60 Fairchild Semiconductor, FMM6G50US60 Datasheet - Page 6

• Manufacturer Part Number: FMM6G50US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FMM6G50US60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 50 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
160
120
Fig 13. Gate Charge Characteristics
Fig 17. Rectifier( Converter ) Characteristics
Fig 15. Forward Characteristics
80
40
0
0
Common Cathode
V
T
T
C
C
GE
= 25]
= 125]
= 0V
Ω
V
R
1
, Reverse Voltage [V]
Forward Voltage, V
2
F
[V]
3
T
C
= 125 ]
25 ]
4
Fig 18. Rectifier( Converter ) Characteristics
Fig 16. Reverse Recovery Characteristics
Fig 14. RBSOA Characteristics
100
0.1
10
100
0.1
1
10
20
10
1
5
2
0
0.4
0
Single Nonrepetitive
Pulse T
V
R
GE
G
= 10 Ω
= 15V
100
J
: 125]
Collector-Emitter Voltage, V
10
0.6
200
V
F
Forward Current, I
, Forward Voltage [V]
T
20
C
0.8
300
=125 ]
400
30
1.0
25 ]
F
500
Common Cathode
di/dt = 100A/k
T
T
[A]
CE
C
C
40
= 25]
= 100]
[V]
1.2
600
FMM6G50US60 Rev. A
T
50
I
rr
rr
700
1.4