FMM6G50US60 Fairchild Semiconductor, FMM6G50US60 Datasheet - Page 4

• Manufacturer Part Number: FMM6G50US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FMM6G50US60

• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 50 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
0.005
Fig 3. Typical Saturation Voltage
0.01
Fig 1. Typical Output Characteristics
Fig 5. Transient Thermal Impedance
0.1
5
1
10
-5
Common Emitter
V
T
T
Common Emitter
T
C
C
GE
C
Characteristics
= 25 ] øø
= 125 ] ------
= 125
= 15 V
10
-4
o
Rectangular Pulse Duration [sec]
C
10
-3
20V
18V
16V
15V
10
-2
10
-1
IGBT
DIODE :
10
:
0
V
14V
GE
= 10V
12V
10
1
Fig 2. Typical Saturation Voltage
Fig 4. Saturation Voltage vs. Case
Fig 6. Capacitance Characteristics
Characteristics
Common Emitter
T
Common Emitter
V
Temperature at Variant Current Level
C
GE
= 25
= 15 V
o
C
20V
18V
16V
15V
14V
12V
V
GE
= 10V
100 A
50 A
25 A
FMM6G50US60 Rev. A