FM2G75US60 Fairchild Semiconductor, FM2G75US60 Datasheet - Page 5

• Manufacturer Part Number: FM2G75US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FM2G75US60

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 75 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
16000
14000
12000
10000
8000
6000
4000
2000
1000
Fig 7. Capacitance Characteristics
Fig 9. Turn-Off Characteristics vs.
Fig 11. Turn-On Characteristics vs.
100
300
100
10
0
20
Common Emitter
V
I
T
T
Tf
C
Toff
CC
C
C
Common Emitter
V
R
T
T
= 75A
= 25℃
= 125℃
Gate Resistance
CC
C
C
G
= 300V, V
Collector Current
= 25℃
= 125℃
= 3.3
= 300V, V
1
10
30
Cies
Coes
Cres
Collector - Emitter Voltage, V
GE
GE
= ± 15V
Gate Resistance, R
Collector Current, I
= ± 15V
40
50
C
G
[A]
[ ]
Common Emitter
V
T
GE
C
60
10
= 25℃
CE
= 0V, f = 1MHz
[V]
70
Ton
Tr
100
75
20000
10000
Fig 8. Turn-On Characteristics vs.
Fig 10. Switching Loss vs. Gate Resistance
Fig 12. Turn-Off Characteristics vs.
1000
1000
1000
100
100
10
20
1
1
Common Emitter
V
I
T
T
Common Emitter
V
I
T
T
C
C
Gate Resistance
Common Emitter
V
R
T
T
CC
C
C
CC
C
C
= 75A
= 75A
C
C
CC
G
= 25℃
= 125℃
= 25℃
= 125℃
Collector Current
= 300V, V
= 300V, V
= 25℃
= 125℃
= 3.3
= 300V, V
30
GE
GE
Gate Resistance, Rg [ ]
GE
Gate Resistance, R
= ± 15V
= ± 15V
= ± 15V
Collector Current, I
40
10
10
50
G
C
[ ]
[A]
60
Ton
Tr
70
Eon
Eoff
FM2G75US60 Rev. A
Toff
Tf
100
100
75