FM2G75US60 Fairchild Semiconductor, FM2G75US60 Datasheet - Page 4

• Manufacturer Part Number: FM2G75US60
• Description: IGBT Modules
• Manufacturer: Fairchild Semiconductor

Specifications of FM2G75US60

• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 75 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Fig 1. Typical Output Characteristics
Fig 3. Saturation Voltage vs. Case
Fig 5. Saturation Voltage vs. V
200
180
160
140
120
100
80
60
40
20
20
16
12
0
5
4
3
2
1
0
8
4
0
0
0
0
Common Emitter
V
Common Emitter
T
Common Emitter
T
C
GE
Temperature at Variant Current Level
C
= 25℃
= 15V
= 25℃
30
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
2
Case Temperature, Tc [ ℃ ]
Ic = 40A
20V
60
8
15V
4
75A
90
12
150A
GE
GE
CE
[V]
6
[V]
120
16
Vge = 10V
I
C
= 40A
150A
12V
75A
150
20
8
Fig 2. Typical Saturation Voltage Characteristics
Fig 4. Load Current vs. Frequency
Fig 6. Saturation Voltage vs. V
200
160
120
100
20
16
12
80
40
80
60
40
20
0
8
4
0
0
0.3
0.1
0
Duty cycle : 50%
Tc = 100℃
Power Dissipation = 100W
Common Emitter
V
T
T
Common Emitter
T
C
C
GE
C
= 25℃
= 125℃
= 125℃
= 15V
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
1
Ic = 40A
1
Frequency [Khz]
8
V
Load Current : peak of square wave
CC
= 300V
10
75A
12
150A
GE
GE
CE
100
[V]
[V]
16
10
FM2G75US60 Rev. A
1000
20
20