QSE213C Fairchild Semiconductor, QSE213C Datasheet - Page 3

• Manufacturer Part Number: QSE213C
• Description: Photodetector Transistors OPTO_LIGHTING
• Manufacturer: Fairchild Semiconductor
• Type: IR Chipr

Specifications of QSE213C

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 100 nA
• Collector- Emitter Voltage Vceo Max: 30 V
• Fall Time: 8 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 8 us
• Package / Case: Thin Side Looker
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Clear Transparent
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 30V
• Collector-emitter Sat Volt (max): 0.4V
• Dark Current (max): 100nA
• Light Current: 1.5mA
• Power Dissipation: 100mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 50deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: Thin Sidelooker
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

QEE213 Rev. 1.0.0
Typical Performance Curves
0.001
0.01
0.1
10
10
10
10
10
1
3
2
1
0
0
0
Fig. 1 Forward Current vs. Forward Voltage
I
t
T
F
pw
A
Pulsed
Normalized to:
I
t
Duty Cycle = 0.1%
T
= 25°C
= 100 µs
F
pw
Fig. 3 Normalized Radiant Intensity
A
= 100 mA Pulsed
= 25°C
= 100 µs
1
V
I
F
F
- FORWARD CURRENT (mA)
- FORWARD VOLTAGE (V)
vs. Forward Current
10
2
3
100
4
5
1000
6
3
180°
170°
160°
1.0
150°
2.0
1.5
1.0
0.5
0.0
Fig. 2 Forward Voltage vs. Ambient Temperature
140°
0.8
130°
I
t
Duty Cycle = 0.1%
F
pw
-40
0.6
Pulsed
120°
= 100 µs
T
Fig. 4 Radiation Diagram
A
110°
0.4
-20
- AMBIENT TEMPERATURE (˚C)
100°
0.2
0
90°
0
20
I
F
0.2
80°
= 50 mA
40
70°
0.4
60°
0.6
I
I
60
F
F
www.fairchildsemi.com
= 100 mA
= 20 mA
50°
0.8
40°
80
30°
20°
1.0
10°
0°
100