QSE213C Fairchild Semiconductor, QSE213C Datasheet
QSE213C
Specifications of QSE213C
Related parts for QSE213C
QSE213C Summary of contents
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... Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. ©2006 Fairchild Semiconductor Corporation QSE213C/QSE214C Rev. 1.0.0 Description The QSE213C/QSE214C is a silicon phototransistor encapsu- lated in a medium angle, infrared transparent, clear thin plastic sidelooker package. 0.060 (1.50) R 0.030 (0.76) 0.020 (0.51) SQ ...
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... Fall Time f Notes: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. 5. λ = 950 nm GaAs. QSE213C/QSE214C Rev. 1.0 25°C unless otherwise specified) A Parameter (2,3,4) (2,3) (1) (T =25° ...
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... Fig. 3 Light Current vs. Ambient Temperature 10 Normalized to 0.5 mW/ 25˚ 0.1 -40 - AMBIENT TEMPERATURE (˚C) A QSE213C/QSE214C Rev. 1.0.0 150° 160° 170° 180° 1 Fig. 4 Light Current vs. Collector to Emitter Voltage 10 1 0.1 0.01 0.001 100 0.1 Fig. 5 Dark Current vs. Ambient Temperature 3 ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete QSE213C/QSE214C Rev. 1.0.0 PowerSaver™ ISOPLANAR™ PowerTrench LittleFET™ QFET MICROCOUPLER™ QS™ MicroFET™ QT Optoelectronics™ ...