EVAL-ADF4360-7EBZ1 Analog Devices Inc, EVAL-ADF4360-7EBZ1 Datasheet - Page 6

• Manufacturer Part Number: EVAL-ADF4360-7EBZ1
• Description: PLL/Frequency Synthesizer EVAL BOARD
• Manufacturer: Analog Devices Inc

Specifications of EVAL-ADF4360-7EBZ1

• Silicon Manufacturer: Analog Devices
• Application Sub Type: Integer-N Synthesizer
• Kit Application Type: Clock & Timing
• Silicon Core Number: ADF4360-7
• Kit Contents: Board
• Main Purpose: Timing, Frequency Synthesizer
• Embedded: No
• Utilized Ic / Part: ADF4360-7
• Primary Attributes: Single Integer-N PLL with VCO
• Secondary Attributes: 900MHz, 200kHz PFD
• Frequency: 1.8GHz
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EVAL-ADF4360-7EB1; EVAL-ADF4360-7EB1; Q5173330; Q5652985

ADF4360-7
ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
AV
AV
V
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
Operating Temperature Range
CSP θ
Lead Temperature, Soldering
1
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
GND = AGND = DGND = 0 V.
VCO
VCO
A
Maximum Junction Temperature
Paddle Soldered
Paddle Not Soldered
Vapor Phase (60 sec)
Infrared (15 sec)
DD
DD
= 25°C, unless otherwise noted.
IN
to GND
to AV
to GND
to DV
to GND
JA
Thermal Impedance
DD
DD
1
Rating
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to V
−0.3 V to V
−0.3 V to V
150°C
50°C/W
88°C/W
215°C
220°C
DD
DD
DD
+ 0.3 V
+ 0.3 V
+ 0.3 V
Rev. A | Page 6 of 28
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rat-
ing only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect device
reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV, and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
12543 (CMOS) and 700 (Bipolar)