QSE114 Fairchild Semiconductor, QSE114 Datasheet - Page 2
![Optoswitch](/photos/22/88/228894/4435866_sml.jpg)
QSE114
Manufacturer Part Number
QSE114
Description
Optoswitch
Manufacturer
Fairchild Semiconductor
Datasheet
1.QSE113.pdf
(4 pages)
Specifications of QSE114
Transistor Polarity
NPN
Wavelength Typ
880nm
Power Consumption
100mW
Viewing Angle
25°
No. Of Pins
2
No. Of Channels
1
Operating Temperature Range
-40°C To +100°C
Input Current Max
100µA
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Black Transparent
Emitter-collector Voltage (max)
5V
Collector-emitter Voltage
30V
Collector-emitter Sat Volt (max)
0.4V
Dark Current (max)
100nA
Light Current
1mA
Rise Time
8000ns
Fall Time
8000ns
Power Dissipation
100mW
Peak Wavelength
880nm
Half-intensity Angle
50deg
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
Side Looker
Leaded Process Compatible
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
© 2002 Fairchild Semiconductor Corporation
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
5. λ = 880 nm (AlGaAs).
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Collector Emitter Voltage
Emitter Collector Voltage
Power Dissipation
ELECTRICAL / OPTICAL CHARACTERISTICS
Parameter
Peak Sensitivity
Reception Angle
Collector Emitter Dark Current
Collector-Emitter Breakdown
Emitter-Collector Breakdown
On-State Collector Current
QSE113
On-State Collector Current
QSE114
Saturation Voltage
Rise Time
Fall Time
(1)
(5)
(5)
(5)
(2,3,4)
(2,3)
V
I
I
E
E
E
I
C
E
C
CE
e
e
e
= 100 µA
= 1mA, V
= 1 mA
= 0.5 mW/cm
= 0.5 mW/cm
= 0.5 mW/cm
= 10 V, E
Test Conditions
(T
A
CC
INFRARED PHOTOTRANSISTOR
= 25°C unless otherwise specified)
e
= 5V, R
= 0
2
2
2
, V
, V
, I
C
Page 2 of 4
CE
CE
= 0.1 mA
L
= 5 V
= 5 V
= 100 Ω
(T
A
=25°C unless otherwise specified)
V
Symbol
BV
BV
I
I
CE(SAT)
I
C(ON)
C(ON)
λ
CEO
Θ
PS
t
CEO
ECO
t
r
f
Symbol
T
T
T
T
SOL-F
V
V
SOL-I
P
OPR
STG
CE
EC
D
PLASTIC SILICON
0.25
1.00
Min
QSE113
30
—
—
—
—
—
—
5
260 for 10 sec
240 for 5 sec
-40 to +100
-40 to +100
Rating
880
±25
Typ
—
—
—
—
—
—
100
8
8
30
5
Max
1.50
100
0.4
—
—
—
—
—
—
—
QSE114
Unit
mW
°C
°C
°C
°C
V
V
Units
Deg.
nM
mA
mA
nA
µs
µs
5/1/02
V
V
V