QSE114 Fairchild Semiconductor, QSE114 Datasheet

QSE114

Manufacturer Part Number

QSE114

Description

Optoswitch

Manufacturer

Fairchild Semiconductor

Datasheet

1.QSE113.pdf (4 pages)

Specifications of QSE114

Transistor Polarity

NPN

Wavelength Typ

880nm

Power Consumption

100mW

Viewing Angle

25Â°

No. Of Pins

No. Of Channels

Operating Temperature Range

-40Â°C To +100Â°C

Input Current Max

100ÂµA

Phototransistor Type

Phototransistor

Polarity

NPN

Number Of Elements

Lens Type

Black Transparent

Emitter-collector Voltage (max)

Collector-emitter Voltage

30V

Collector-emitter Sat Volt (max)

0.4V

Dark Current (max)

100nA

Light Current

1mA

Rise Time

8000ns

Fall Time

8000ns

Power Dissipation

100mW

Peak Wavelength

880nm

Half-intensity Angle

50deg

Operating Temp Range

-40C to 100C

Operating Temperature Classification

Industrial

Mounting

Through Hole

Pin Count

Package Type

Side Looker

Leaded Process Compatible

Yes

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

QSE114

Manufacturer:

FSC

Quantity:

6 985

Current page: 1 of 4
Download datasheet (321Kb)

DESCRIPTION

The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.

FEATURES

• NPN silicon phototransistor

• Package type: Sidelooker

• Medium wide reception angle, 50°

• Package material and color: black epoxy

• Matched emitter: QEE113

• Daylight ﬁlter

• High sensitivity

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless

otherwise speciﬁed.

Ø 0.095 (2.41)

0.050 (1.27)

0.030 (0.76)

PACKAGE DIMENSIONS

0.087 (2.22)

EMITTER

0.100 (2.54)

NOM

0.020 (0.51) SQ.

0.100 (2.54)

(2X)

COLLECTOR

0.175 (4.44)

Ø 0.065 (1.65)

0.500 (12.70)

INFRARED PHOTOTRANSISTOR

0.200 (5.08)

MIN

Page 1 of 4

PLASTIC SILICON

QSE113

SCHEMATIC

Collector

Emitter

QSE114

5/1/02

Related parts for QSE114

QSE114 Summary of contents

Page 1

... Matched emitter: QEE113 • Daylight ﬁlter • High sensitivity © 2002 Fairchild Semiconductor Corporation INFRARED PHOTOTRANSISTOR 0.175 (4.44) Ø 0.065 (1.65) 0.200 (5.08) 0.500 (12.70) MIN COLLECTOR 0.020 (0.51) SQ. (2X) 0.100 (2.54) Page PLASTIC SILICON QSE113 QSE114 SCHEMATIC Collector Emitter 5/1/02 ...

Page 2

... C(ON 0.5 mW/ C(ON 0.5 mW/ 0.1 mA CE(SAT 100 Ω 1mA 5V Page PLASTIC SILICON QSE113 QSE114 Symbol Rating T -40 to +100 OPR T -40 to +100 STG T 240 for 5 sec SOL-I T 260 for 10 sec SOL 100 D Min Typ Max — 880 — PS Θ — ±25 — ...

Page 3

... Normalized to 25V 25V 25° Ambient Temperature ( ° Page PLASTIC SILICON QSE113 QSE114 Figure 2. Angular Response Curve 90 100 80 110 70 120 60 130 50 40 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 Figure 4. Light Current vs. Collector - Emitter Voltage 1mW/ 0.5mW/ 0.2mW/ 0.1mW/cm Normalized to: ...

Page 4

... Fairchild Semiconductor Corporation PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system affect its safety or effectiveness. Page QSE114 5/1/02 ...

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