PSMN039-100YS NXP Semiconductors, PSMN039-100YS Datasheet - Page 4

• Manufacturer Part Number: PSMN039-100YS
• Description: MOSFET,N CH,100V,28.1A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN039-100YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 30.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN039-100YS_2
Product data sheet
Fig 3.
(A)
I
D
10
10
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10
-1
-2
3
2
1
1
Limit R
DSon
= V
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
10
DC
Rev. 02 — 2 April 2010
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
10
2
100 ms
t
100 μ s
1 ms
10 ms
p
=10 μ s
PSMN039-100YS
V
DS
(V)
© NXP B.V. 2010. All rights reserved.
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