PSMN039-100YS NXP Semiconductors, PSMN039-100YS Datasheet - Page 8

• Manufacturer Part Number: PSMN039-100YS
• Description: MOSFET,N CH,100V,28.1A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN039-100YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 30.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN039-100YS_2
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
R
(mΩ)
DSon
(A)
I
10
10
10
10
10
10
D
100
−1
−2
−3
−4
−5
−6
80
60
40
20
of gate-source voltage; typical values
gate-source voltage
Drain-source on-state resistance as a function
0
4
8
2
min
12
typ
4
16
max
V
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GS
003aae100
V
GS
(V)
03aa35
(V)
20
6
Rev. 02 — 2 April 2010
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
3.2
2.4
1.6
0.8
5
4
3
2
1
0
0
−60
junction temperature
factor as a function of junction temperature
-60
0
0
PSMN039-100YS
60
60
max
min
typ
120
120
© NXP B.V. 2010. All rights reserved.
003aad774
003aad280
T
T
j
j
(°C)
(°C)
180
180
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