PSMN039-100YS NXP Semiconductors, PSMN039-100YS Datasheet - Page 6

MOSFET,N CH,100V,28.1A,LFPAK

PSMN039-100YS

Manufacturer Part Number
PSMN039-100YS
Description
MOSFET,N CH,100V,28.1A,LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN039-100YS

Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
30.8mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor
RoHS Compliant
Transistor Case Style
SOT-669
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN039-100YS
Manufacturer:
TELTONE
Quantity:
24 000
Company:
Part Number:
PSMN039-100YS
Quantity:
50
NXP Semiconductors
6. Characteristics
Table 6.
PSMN039-100YS_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance
(AC)
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
f = 1 MHz
I
see
I
I
see
I
see
V
V
T
V
R
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
G(ext)
= 25 °C; see
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 15 A; V
= 0 A; V
= 15 A; V
= 15 A; V
Figure 10
Figure 11
Figure 10
Figure 12
Figure 12
Figure 13
Figure 14
Figure 14
Figure 14
All information provided in this document is subject to legal disclaimers.
= 100 V; V
= 100 V; V
= 50 V; see
= 50 V; V
= 50 V; R
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω; T
DS
DS
DS
DS
DS
DS
DS
D
D
D
Rev. 02 — 2 April 2010
= 0 V; V
DS
GS
L
and
and
and
DS
= 15 A; T
= 15 A; T
= 15 A; T
= 50 V; V
= 50 V; V
= 50 V; V
GS
GS
= V
= V
= V
= 3.3 Ω; V
GS
GS
Figure 16
Figure 14
= 0 V; T
= 0 V; f = 1 MHz;
j
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
10
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
GS
GS
GS
15
15
; T
; T
; T
GS
j
j
j
j
j
j
GS
GS
GS
j
= 10 V
= 175 °C;
= 25 °C;
= -55 °C;
= 100 °C;
= 175 °C;
= 25 °C;
j
GS
= 25 °C
j
j
j
j
= 25 °C
and
= 125 °C
= 25 °C
= 10 V;
= 10 V;
= 10 V;
= -55 °C
= 25 °C
= 10 V;
15
PSMN039-100YS
Min
90
100
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
-
0.01
2
2
-
72.9
30.8
23
19
5
3
2
8
4.5
1847
86
64
11
8
7
0.62
22
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
4
4.7
50
2
100
100
71
100
39.5
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
µA
pF
Unit
V
V
V
V
V
µA
nA
nA
mΩ
mΩ
mΩ
nC
nC
nC
nC
nC
nC
V
pF
pF
ns
ns
ns
ns
6 of 15

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