PSMN039-100YS NXP Semiconductors, PSMN039-100YS Datasheet - Page 10

• Manufacturer Part Number: PSMN039-100YS
• Description: MOSFET,N CH,100V,28.1A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN039-100YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 30.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
PSMN039-100YS_2
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
I
S
25
20
15
10
5
0
0
All information provided in this document is subject to legal disclaimers.
0.25
Rev. 02 — 2 April 2010
T
j
= 175 ° C
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
0.5
0.75
T
003aae102
j
V
= 25 ° C
SD
(V)
1
PSMN039-100YS
© NXP B.V. 2010. All rights reserved.
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