PSMN039-100YS NXP Semiconductors, PSMN039-100YS Datasheet - Page 5

• Manufacturer Part Number: PSMN039-100YS
• Description: MOSFET,N CH,100V,28.1A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN039-100YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 30.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN039-100YS_2
Product data sheet
Symbol
R
Z
Fig 4.
th(j-mb)
th
(K/W)
10
10
10
-1
-2
-3
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
Thermal characteristics
-6
Parameter
thermal resistance from
junction to mounting
base
0.05
0.02
single shot
δ = 0.5
0.2
0.1
10
-5
Conditions
see
Figure 4
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 02 — 2 April 2010
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
10
-3
10
-2
PSMN039-100YS
Min
-
10
P
-1
Typ
1
t
p
T
© NXP B.V. 2010. All rights reserved.
t
p
(s)
003aae093
δ =
Max
2.03
t
T
p
t
1
Unit
K/W
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