PSMN039-100YS,115 NXP Semiconductors, PSMN039-100YS,115 Datasheet
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PSMN039-100YS,115
Specifications of PSMN039-100YS,115
Related parts for PSMN039-100YS,115
PSMN039-100YS,115 Summary of contents
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... PSMN039-100YS N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET Rev. 02 — 2 April 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... G gate mb D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name PSMN039-100YS LFPAK PSMN039-100YS_2 Product data sheet N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET Quick reference …continued Conditions drain-source on-state resistance T = 100 °C; see ...
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... GS j(init) D ≤ 100 V; unclamped Ω V sup GS 003aae091 120 P der (%) 80 40 150 200 ( ° Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 April 2010 PSMN039-100YS Min - - - Figure -55 - 100 150 Normalized total power dissipation as a function of mounting base temperature © NXP B.V. 2010. All rights reserved. ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN039-100YS_2 Product data sheet N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET / All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 April 2010 PSMN039-100YS 003aae092 =10 μ 100 μ 100 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN039-100YS_2 Product data sheet N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 April 2010 PSMN039-100YS Min Typ Max - 1 2.03 003aae093 t p δ ...
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... Figure see Figure 14 and see Figure 14 and MHz °C; see Figure 3.3 Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 April 2010 PSMN039-100YS Min Typ Max Unit 100 - - 4 µA - 0.01 2 µ 100 100 nA - ...
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... Figure /dt = 100 A/µ 003aae096 (A) D Fig 6. 003aae097 C iss C rss (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 April 2010 PSMN039-100YS Min Typ - 0 ( 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values 30 6.5 10 5.5 5 ...
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... (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 April 2010 PSMN039-100YS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 3.2 a 2.4 1 ...
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... N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET 003aae099 5 5 (A) D Fig 14. Gate charge waveform definitions 003aae101 10 C (pF 50V (nC) G Fig 16. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 April 2010 PSMN039-100YS GS(pl) V GS(th GS1 GS2 G(tot drain current ...
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... Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN039-100YS_2 Product data sheet N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET ( 175 ° 0.25 0.5 All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 April 2010 PSMN039-100YS 003aae102 = 25 ° 0. (V) SD © NXP B.V. 2010. All rights reserved ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 April 2010 PSMN039-100YS detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
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... N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 April 2010 PSMN039-100YS Supersedes PSMN039-100YS_1 - © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 April 2010 PSMN039-100YS © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 2 April 2010 PSMN039-100YS Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 April 2010 Document identifier: PSMN039-100YS_2 ...