SI4563DY-T1-GE3 Vishay, SI4563DY-T1-GE3 Datasheet - Page 9

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SI4563DY-T1-GE3

Manufacturer Part Number
SI4563DY-T1-GE3
Description
NPN & PNP MOSFET, SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4563DY-T1-GE3

Transistor Polarity
N And P Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
16mohm
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
2W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4563DY-T1-GE3
Manufacturer:
MICRON
Quantity:
310
Part Number:
SI4563DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
- 0.1
- 0.2
- 0.3
0.0
0.5
0.4
0.3
0.2
0.1
100
0.1
10
1
0.0
- 50
- 25
Source-Drain Diode Forward Voltage
T
0.3
V
J
SD
= 150 °C
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
- Temperature (°C)
25
0.6
50
I
D
= 250 µA
0.9
75
T
J
0.01
100
= 25 °C
0.1
100
10
1
0.1
1.2
I
D
* V
Safe Operating Area, Junction-to-Ambient
Limited by R
= 5 mA
125
GS
> minimum V
V
1.5
150
DS
DS(on)
- Drain-to-Source Voltage (V)
Single Pulse
1
T
A
*
GS
= 25 °C
at which R
DS(on)
10
0.20
0.16
0.12
0.08
0.04
0.00
50
40
30
20
10
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
10 ms
1 ms
100 ms
1 s
10 s
DC
T
2
A
0.01
100
V
= 25 °C
GS
3
- Gate-to-Source Voltage (V)
T
A
4
= 125 °C
Time (s)
0.1
5
Vishay Siliconix
6
Si4563DY
I
7
D
www.vishay.com
= 5 A
1
8
9
10
10
9

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