SI4563DY-T1-E3 Vishay, SI4563DY-T1-E3 Datasheet

MOSFET N/P-CH 40V 8-SOIC

SI4563DY-T1-E3

Manufacturer Part Number
SI4563DY-T1-E3
Description
MOSFET N/P-CH 40V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4563DY-T1-E3

Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
8A, 6.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
85nC @ 10V
Input Capacitance (ciss) @ Vds
2390pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V @ N Channel or 0.025 Ohm @ 10 V @ P Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
8 A @ N Channel or 6.6 A @ P Channel
Power Dissipation
2000 mW
Mounting Style
SMD/SMT
Continuous Drain Current Id
8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
16mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4563DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4563DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 120 °C/W.
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
Ordering Information: Si4563DY-T1-E3 (Lead (Pb)-free)
N-Channel
P-Channel
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
G
G
S
S
1
1
2
2
C
V
= 25 °C.
DS
- 40
40
1
2
3
4
(V)
Si4563DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.032 at V
0.025 at V
0.019 at V
Top View
0.016 at V
SO-8
R
J
N- and P-Channel 40-V (D-S) MOSFET
DS(on)
= 150 °C)
b, d
GS
GS
GS
GS
(Ω)
= - 4.5 V
= - 10 V
8
7
6
5
= 4.5 V
= 10 V
D
D
D
D
1
1
2
2
I
D
- 7.5
- 8
(A)
8
8
A
a
= 25 °C, unless otherwise noted
Q
Steady State
T
T
T
L = 0 1 mH
T
T
T
T
T
T
T
g
C
C
C
C
C
A
A
A
A
A
t ≤ 10 s
(Typ.)
56
6
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Symbol
Symbol
FEATURES
APPLICATIONS
T
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• CCFL Inverter
R
R
J
V
V
E
I
I
I
P
, T
I
DM
SM
thJA
thJF
I
AS
DS
GS
AS
D
S
D
Available
stg
Typ.
g
45
29
G
N-Channel
Tested
N-Channel
1
®
1.25
6.5
1.6
2.0
Power MOSFET
3.25
2.10
8
N-Channel MOSFET
2.7
40
20
20
20
20
b, c
8
8
b, c
b, c
b, c
b, c
Max.
62.5
38
D
S
- 55 to 150
1
1
± 16
Typ.
45
29
P-Channel
P-Channel
- 6.6
- 5.2
- 1.6
Vishay Siliconix
1.25
2.0
- 6.5
- 2.7
31.2
3.25
2.10
- 40
- 20
- 20
- 8
25
G
b, c
b, c
b, c
b, c
b, c
2
Si4563DY
Max.
62.5
P-Channel MOSFET
38
www.vishay.com
S
D
2
2
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4563DY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4563DY-T1-E3 (Lead (Pb)-free) Si4563DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...

Page 2

... Si4563DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...

Page 3

... D GEN g P-Channel t d(off Ω ≅ 4 GEN ° 1 1 N-Channel dI/dt = 100 A/µ ° P-Channel dI/ 100 A/µ Si4563DY Vishay Siliconix a Min. Typ. Max P-Ch 75 115 = 1 Ω N- P-Ch 68 105 N-Ch 88 135 P- N-Ch 117 180 P-Ch 93 140 N- P-Ch 80 120 = 16 Ω N- P-Ch ...

Page 4

... Si4563DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.6 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.020 0.018 0.016 0.014 0.012 0.010 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge www.vishay.com thru 3 V ...

Page 5

... Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4563DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 1 Time (s) ...

Page 6

... Si4563DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Single Pulse 0. Document Number: 73513 S09-0393-Rev. C, 09-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si4563DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 °C/W thJA ( ...

Page 8

... Si4563DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.6 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.030 0.027 0.024 0.021 0.018 0.015 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge www.vishay.com ...

Page 9

... J 0.9 1.2 1.5 = 250 µ 100 125 150 100 Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Ambient Si4563DY Vishay Siliconix 0. 0.16 0.12 0. 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 ...

Page 10

... Si4563DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73513. Document Number: 73513 S09-0393-Rev. C, 09-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si4563DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 °C/W ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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