SI4563DY-T1-GE3 Vishay, SI4563DY-T1-GE3 Datasheet - Page 7
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SI4563DY-T1-GE3
Manufacturer Part Number
SI4563DY-T1-GE3
Description
NPN & PNP MOSFET, SOIC
Manufacturer
Vishay
Datasheet
1.SI4563DY-T1-E3.pdf
(12 pages)
Specifications of SI4563DY-T1-GE3
Transistor Polarity
N And P Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
16mohm
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
2W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4563DY-T1-GE3
Manufacturer:
MICRON
Quantity:
310
Part Number:
SI4563DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
0.01
0.01
0.1
0.1
2
1
1
10
10
- 4
-4
0.1
0.05
0.05
0.02
Duty Cycle = 0.5
0.02
0.1
Duty Cycle = 0.5
0.2
0.2
0.5
0.5
Single Pulse
Single Pulse
10
- 3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
- 2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
- 1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
1
1
A
= P
Vishay Siliconix
t
2
DM
100
Z
thJA
thJA
t
t
Si4563DY
1
2
(t)
= 120 °C/W
www.vishay.com
1000
10
7