SI4563DY-T1-GE3 Vishay, SI4563DY-T1-GE3 Datasheet - Page 4
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SI4563DY-T1-GE3
Manufacturer Part Number
SI4563DY-T1-GE3
Description
NPN & PNP MOSFET, SOIC
Manufacturer
Vishay
Datasheet
1.SI4563DY-T1-E3.pdf
(12 pages)
Specifications of SI4563DY-T1-GE3
Transistor Polarity
N And P Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
16mohm
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
2W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4563DY-T1-GE3
Manufacturer:
MICRON
Quantity:
310
Part Number:
SI4563DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4563DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.020
0.018
0.016
0.014
0.012
0.010
10
20
16
12
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
4
0
0.0
0
0
I
D
= 5 A
V
GS
12
0.6
4
= 4.5 V
V
V
DS
DS
Q
Output Characteristics
g
= 20 V
V
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
DS
V
GS
- Drain Current (A)
Gate Charge
= 10 V
24
1.2
8
= 10 V
V
DS
= 30 V
12
36
1.8
V
GS
= 10 thru 3 V
2 V
16
48
2.4
20
60
3.0
3500
2800
2100
1400
1.8
1.5
1.2
0.9
0.6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
700
- 50
0
0.0
0
On-Resistance vs. Junction Temperature
C
I
D
- 25
rss
= 5 A
0.6
V
V
T
8
GS
Transfer Characteristics
DS
J
0
- Junction Temperature (°C)
T
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
C
= 125 °C
oss
25
Capacitance
25 °C
1.2
16
S09-0393-Rev. C, 09-Mar-09
50
C
Document Number: 73513
iss
1.8
24
75
V
- 55 °C
100
GS
V
= 10 V
GS
2.4
32
= 4.5 V
125
150
3.0
40