SI4563DY-T1-GE3 Vishay, SI4563DY-T1-GE3 Datasheet
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SI4563DY-T1-GE3
Specifications of SI4563DY-T1-GE3
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SI4563DY-T1-GE3 Summary of contents
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... Top View Ordering Information: Si4563DY-T1-E3 (Lead (Pb)-free) Si4563DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...
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... Si4563DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... D GEN g P-Channel t d(off Ω ≅ 4 GEN ° 1 1 N-Channel dI/dt = 100 A/µ ° P-Channel dI/ 100 A/µ Si4563DY Vishay Siliconix a Min. Typ. Max P-Ch 75 115 = 1 Ω N- P-Ch 68 105 N-Ch 88 135 P- N-Ch 117 180 P-Ch 93 140 N- P-Ch 80 120 = 16 Ω N- P-Ch ...
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... Si4563DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.6 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.020 0.018 0.016 0.014 0.012 0.010 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge www.vishay.com thru 3 V ...
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... Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4563DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 1 Time (s) ...
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... Si4563DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Single Pulse 0. Document Number: 73513 S09-0393-Rev. C, 09-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si4563DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 °C/W thJA ( ...
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... Si4563DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.6 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.030 0.027 0.024 0.021 0.018 0.015 Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge www.vishay.com ...
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... J 0.9 1.2 1.5 = 250 µ 100 125 150 100 Limited DS(on 0 °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Ambient Si4563DY Vishay Siliconix 0. 0.16 0.12 0. 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 ...
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... Si4563DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73513. Document Number: 73513 S09-0393-Rev. C, 09-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si4563DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 °C/W ...
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