SI4563DY-T1-GE3 Vishay, SI4563DY-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SI4563DY-T1-GE3
• Description: NPN & PNP MOSFET, SOIC
• Manufacturer: Vishay

Specifications of SI4563DY-T1-GE3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 16mohm
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 2W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4563DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.030
0.027
0.024
0.021
0.018
0.015
10
20
16
12
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
8
4
0
0.0
0
0
I
D
= 5 A
11
0.6
4
V
DS
Q
Output Characteristics
V
V
g
GS
- Drain-to-Source Voltage (V)
DS
I
D
- Total Gate Charge (nC)
V
V
GS
= 20 V
= 10 thru 4 V
GS
- Drain Current (A)
Gate Charge
22
1.2
8
= 10 V
= 4.5 V
V
DS
V
DS
= 10 V
= 30 V
12
33
1.8
3 V
16
44
2.4
20
55
3.0
3500
2800
2100
1400
700
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0.0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
I
D
- 25
rss
= 5 A
V
0.6
V
8
DS
T
GS
Transfer Characteristics
J
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
iss
Capacitance
25
1.2
16
T
C
S09-0393-Rev. C, 09-Mar-09
= 125 °C
25 °C
C
50
oss
Document Number: 73513
1.8
24
75
V
GS
100
= 10 V
V
GS
2.4
32
- 55 °C
= 4.5 V
125
150
3.0
40