SI4563DY-T1-GE3 Vishay, SI4563DY-T1-GE3 Datasheet - Page 6
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SI4563DY-T1-GE3
Manufacturer Part Number
SI4563DY-T1-GE3
Description
NPN & PNP MOSFET, SOIC
Manufacturer
Vishay
Datasheet
1.SI4563DY-T1-E3.pdf
(12 pages)
Specifications of SI4563DY-T1-GE3
Transistor Polarity
N And P Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
16mohm
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
2W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4563DY-T1-GE3
Manufacturer:
MICRON
Quantity:
310
Part Number:
SI4563DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4563DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
4.0
3.2
2.4
1.6
0.8
0.0
0
Power Derating, Junction-to-Foot
25
D
T
is based on T
C
- Case Temperature (°C)
50
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
12
10
8
6
4
2
0
0
125
Package Limited
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
S09-0393-Rev. C, 09-Mar-09
75
Document Number: 73513
100
125
150