BLL6H1214L-250 NXP Semiconductors, BLL6H1214L-250 Datasheet - Page 7

• Manufacturer Part Number: BLL6H1214L-250
• Description: LDMOS,RF,250W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214L-250

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 42A
• Operating Frequency Range: 960MHz To 1.2GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLL6H1214L-250_1214LS-250
Product data sheet
7.3 Application circuit
Table 9.
See
Striplines are on a Rodgers Duroid 6006 Printed-Circuit Board (PCB);
thickness = 0.64 mm
[1]
[2]
[3]
Component Description
C2, C4
C3, C8
C5
C6, C7
C9
C10
R1
C1
Fig 7.
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 800B or capacitor of same quality.
Figure
C1
See
Component layout for class-AB application circuit
C2
7.
List of components
C3
Table 9
multilayer ceramic chip capacitor 10 F; 35 V
multilayer ceramic chip capacitor 51 pF
multilayer ceramic chip capacitor 1 nF
multilayer ceramic chip capacitor 82 pF
multilayer ceramic chip capacitor 56 pF
multilayer ceramic chip capacitor 100 pF
electrolytic capacitor
SMD resistor
C5
All information provided in this document is subject to legal disclaimers.
C4
for list of components.
Rev. 3 — 14 July 2010
R1
Value
47 F; 63 V
10 
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
[1]
[2]
[2]
[3]
[3]
[3]
Remarks
0603

r
= 6.15 F/m;
C7
© NXP B.V. 2010. All rights reserved.
C9
C8
C10
001aal170
C6
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