BLL6H1214L-250 NXP Semiconductors, BLL6H1214L-250 Datasheet - Page 10

• Manufacturer Part Number: BLL6H1214L-250
• Description: LDMOS,RF,250W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214L-250

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 42A
• Operating Frequency Range: 960MHz To 1.2GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 11.
BLL6H1214L-250_1214LS-250
Product data sheet
Document ID
BLL6H1214L-250_1214LS-250 v.3
Modifications:
BLL6H1214L-250_1214LS-250_2
BLL6H1214L-250_1214LS-250_1
Revision history
Table 10.
Acronym
LDMOS
LDMOST
RF
SMD
VSWR
Abbreviations
Release
date
20100714 Product data
20100302 Objective data
20091211 Objective data
•
Table 7 on page
All information provided in this document is subject to legal disclaimers.
Description
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Data sheet status Change notice
sheet
sheet
sheet
Rev. 3 — 14 July 2010
3: the minimum value of 
-
-
-
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
D
has been changed.
Supersedes
BLL6H1214L-250_1214LS-250_2
BLL6H1214L-250_1214LS-250_1
-
© NXP B.V. 2010. All rights reserved.
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