BLL6H1214L-250 NXP Semiconductors, BLL6H1214L-250 Datasheet - Page 5

• Manufacturer Part Number: BLL6H1214L-250
• Description: LDMOS,RF,250W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214L-250

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 42A
• Operating Frequency Range: 960MHz To 1.2GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLL6H1214L-250_1214LS-250
Product data sheet
Fig 2.
(W)
P
L
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
350
300
250
200
150
100
50
0
0
V
Output power as a function of input power;
typical values
DS
= 50 V; t
7.2 RF performance
p
= 300 s;  = 10 %; I
3
(1)
(2)
(3)
6
Dq
P
All information provided in this document is subject to legal disclaimers.
i
(W)
001aal165
= 100 mA.
9
Rev. 3 — 14 July 2010
Fig 3.
(dB)
G
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
p
20
16
12
8
4
0
0
V
Power gain as a function of load power;
typical values
DS
= 50 V; t
BLL6H1214L(S)-250
50
LDMOS L-band radar power transistor
100
p
= 300 s;  = 10 %; I
(1)
(2)
(3)
150
200
250
© NXP B.V. 2010. All rights reserved.
Dq
300
001aal166
= 100 mA.
P
L
(W)
350
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