BLL6H1214L-250 NXP Semiconductors, BLL6H1214L-250 Datasheet - Page 4

• Manufacturer Part Number: BLL6H1214L-250
• Description: LDMOS,RF,250W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214L-250

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 42A
• Operating Frequency Range: 960MHz To 1.2GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
7. Application information
BLL6H1214L-250_1214LS-250
Product data sheet
6.1 Ruggedness in class-AB operation
7.1 Impedance information
The BLL6H1214L-250 and BLL6H1214LS-250 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Table 8.
Typical values unless otherwise specified.
f
GHz
1.2
1.3
1.4
Fig 1.
Definition of transistor impedance
Typical impedance
DS
All information provided in this document is subject to legal disclaimers.
= 50 V; I
Rev. 3 — 14 July 2010
Dq
= 100 mA; P
Z

1.268  j2.623
2.193  j2.457
2.359  j2.052
S
gate
Z
S
L
= 250 W; t
001aaf059
BLL6H1214L(S)-250
LDMOS L-band radar power transistor
Z
drain
L
p
= 300 s;  = 10 %.
Z

2.987  j1.664
2.162  j1.326
1.604  j1.887
L
© NXP B.V. 2010. All rights reserved.
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