BLL6H1214L-250 NXP Semiconductors, BLL6H1214L-250 Datasheet - Page 3

• Manufacturer Part Number: BLL6H1214L-250
• Description: LDMOS,RF,250W,1200M-1400MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLL6H1214L-250

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 42A
• Operating Frequency Range: 960MHz To 1.2GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
BLL6H1214L-250_1214LS-250
Product data sheet
Table 5.
Table 6.
T
Table 7.
Mode of operation: pulsed RF; t
T
Symbol
Z
Symbol Parameter
V
I
I
g
Symbol
V


V
I
R
P
G
t
RL
P
P
t
t
DSS
DSX
GSS
p
r
f
j
case
fs
th(j-c)
D
(BR)DSS
GS(th)
L
DS
L(1dB)
droop(pulse)
DS(on)
p
= 25
in
= 25

C.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V

Parameter
transient thermal impedance from
junction to case
C; unless otherwise specified, in a class-AB production test circuit.
Thermal characteristics
DC characteristics
RF characteristics
Parameter
output power
drain-source voltage
power gain
pulse duration
duty cycle
input return loss
output power at 1 dB gain compression
drain efficiency
pulse droop power
rise time
fall time
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 July 2010
p
= 300

s;

= 10 %; RF performance at V
Conditions
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
= 9.5 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
BLL6H1214L(S)-250
GS(th)
GS(th)
Conditions
T
LDMOS L-band radar power transistor
case
t
t
t
t
t
p
p
p
p
p
D
DS
= 100 s;  = 10 %
= 200 s;  = 10 %
= 300 s;  = 10 %
= 100 s;  = 20 %
= 500 s;  = 20 %
D
D
Conditions
P
P
P
P
P
P
P
P
P
= 2.7 mA
+ 3.75 V;
+ 3.75 V;
DS
= 85 C; P
= 270 mA
= 270 mA
L
L
L
L
L
L
L
L
L
= 50 V
= 250 W
= 250 W
= 250 W
= 250 W
= 250 W
= 250 W
= 250 W
= 250 W
= 250 W
= 0 V
L
= 250 W
Min
100
1.3
-
32
-
1.6
-
DS
Min Typ Max Unit
250 -
-
15
-
-
-
-
49
-
-
-
= 50 V; I
© NXP B.V. 2010. All rights reserved.
Typ
-
1.8
-
42
-
2.3
100
17
10
55
-
300 500
10
300 -
0
15
5
Dq
Typ
0.10
0.13
0.15
0.14
0.20
-
50
-
20
-
-
0.3
-
-
Max Unit
-
2.25 V
1.4
-
140 nA
-
169 m
= 100 mA;
3 of 13
Unit
K/W
K/W
K/W
K/W
K/W
W
V
dB
s
%
dB
W
%
dB
ns
ns
V
A
A
S