BLL6H1214-500,112 NXP Semiconductors, BLL6H1214-500,112 Datasheet
BLL6H1214-500,112
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BLL6H1214-500,112 Summary of contents
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... BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...
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... LDMOST ceramic package; 2 mounting holes; 4 leads Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor Simplified outline Graphic symbol [1] ...
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... P L(1dB) η droop(pulse 6.1 Ruggedness in class-AB operation The BLL6H1214-500 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 150 mA BLL6H1214-500_2 Product data sheet Thermal characteristics Parameter transient thermal impedance from junction to case DC characteristics C; per section unless otherwise specified. ...
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... Z S Definition of transistor impedance All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor Z L Ω 2.987 − j1.664 2.162 − j1.326 1.604 − j1.887 drain ...
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... Output power as a function of input power; typical values BLL6H1214-500_2 Product data sheet 001aak751 (dB) (1) (2) (3) ( 150 mA. Dq Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor = 300 μs and (1) 15 (2) (3) (4) ( 100 200 300 400 500 = 300 μ ...
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... 500 Input return loss as a function of frequency; typical value All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor 20 p η 1175 1225 1275 1325 = 300 μ ...
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... Dq Fig 8. 001aak758 (1) (2) (3) 500 600 700 P ( 100 mA. Dq Fig 10. Power gain and drain efficiency as function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor = 300 μs and (1) (dB) (2) ( 100 200 300 ...
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... D (%) 100 200 = 300 μs; δ −40 ° ° 65°C hs All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor = 300 μs and f = 1300 MHz (dB (1) (2) ( 100 200 300 400 500 = 300 μs; δ ...
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... Fig 15. Power gain as a function of load power; 001aal693 (1) (2) (3) 500 600 700 P ( 150 mA. Dq Fig 17. Power gain and drain efficiency as function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor = 500 μs and (dB) 16 (1) (2) ( ...
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... Fig 19. Power gain as a function of load power; 001aal697 (1) (3) (2) 500 600 700 P ( 150 mA. Dq Fig 21. Power gain and drain efficiency as function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor = 500 μs and (dB (1) (2) ( ...
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... D (%) 100 200 = 500 μs; δ −40 ° ° 65°C hs All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor = 500 μs and f = 1300 MHz (dB) 16 (1) (2) ( 100 200 300 400 500 = 500 μs; δ ...
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... Fig 26. Power gain as a function of load power; 001aal704 (1) (2) (3) 500 600 700 P ( 150 mA. Dq Fig 28. Power gain and drain efficiency as function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor = 1 ms and (dB) 16 (1) (2) ( ...
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... Fig 30. Power gain as a function of load power; 001aal708 (1) (2) (3) 500 600 700 P ( 150 mA. Dq Fig 32. Power gain and drain efficiency as function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor = 1 ms and (dB) 16 (1) (2) ( ...
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... D (%) 100 200 = 500 μs; δ −40 ° ° 65°C hs All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor = 1 ms and f = 1300 MHz (dB) 16 (1) (2) ( 100 200 300 400 500 = 500 μs; δ ...
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... SMD resistor metal film resistor 6.15 F/m; thickness = 0.64 mm; thickness copper plating = 35 μm. r All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor Value Remarks 22 μ [ [1] 100 pF [2] ...
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... REFERENCES JEDEC EIAJ All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor ...
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... Section 7.2.7 on page 12. Section 7.2.8 on page 13. Section 7.2.9 on page 14. Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor Change notice Supersedes - BLL6H1214-500_1 - - © NXP B.V. 2010. All rights reserved ...
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... NXP Semiconductors’ warranty of the All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 1 April 2010 BLL6H1214-500 LDMOS L-band radar power transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLL6H1214-500_2 All rights reserved. Date of release: 1 April 2010 ...