H27UF081G1M-TPCB HYNIX SEMICONDUCTOR, H27UF081G1M-TPCB Datasheet - Page 9

• Manufacturer Part Number: H27UF081G1M-TPCB
• Description: IC, MEMORY, FLASH NAND 1GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UF081G1M-TPCB

• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Base Number: 27
• Interface: Serial
• Logic: RoHS Compliant
• Package / Case: TSOP
• Memory Type: Flash - NAND
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes
• Memory Size: 1Gbit

Rev 0.2 / May. 2007
NOTE:
1. With the CE don’t care option CE high during latency time does not stop the read operation
CLE
H
H
X
X
X
X
L
L
L
L
L
ALE
H
H
L
L
L
L
L
X
X
X
X
L
CE
H
(1)
X
X
X
L
L
L
L
L
L
Rising
Rising
Rising
Rising
Rising
WE
H
H
X
X
X
X
Table 6: Mode Selection
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Falling
RE
H
H
H
H
H
H
X
X
X
X
0V/Vcc
WP
X
X
H
H
H
X
X
H
H
L
HY27US(08/16)1G1M Series
Read Mode
Write Mode
Data Input
Sequential Read and Data Output
During Read (Busy)
During Program (Busy)
During Erase (Busy)
Write Protect
Stand By
Command Input
Address Input(4 cycles)
Command Input
Address Input(4 cycles)
MODE
Preliminary
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