H27UF081G1M-TPCB HYNIX SEMICONDUCTOR, H27UF081G1M-TPCB Datasheet - Page 38

• Manufacturer Part Number: H27UF081G1M-TPCB
• Description: IC, MEMORY, FLASH NAND 1GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UF081G1M-TPCB

• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Base Number: 27
• Interface: Serial
• Logic: RoHS Compliant
• Package / Case: TSOP
• Memory Type: Flash - NAND
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes
• Memory Size: 1Gbit

Rev 0.2 / May. 2007
Symbol
alpha
C1
D1
A1
A2
CP
D
A
B
C
E
e
Table 18: 48pin-USOP1, 12 x 17mm, Package Mechanical Data
Figure 32. 48pin-USOP1, 12 x 17mm, Package Outline
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
16.900
11.910
15.300
0.470
0.130
0.065
0.450
Min
0
0
millimeters
HY27US(08/16)1G1M Series
17.000
12.000
15.400
0.050
0.520
0.160
0.100
0.650
0.500
Typ
17.100
12.120
15.500
Preliminary
0.650
0.080
0.570
0.230
0.175
0.750
0.100
Max
8
38