H27UF081G1M-TPCB HYNIX SEMICONDUCTOR, H27UF081G1M-TPCB Datasheet - Page 15

• Manufacturer Part Number: H27UF081G1M-TPCB
• Description: IC, MEMORY, FLASH NAND 1GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UF081G1M-TPCB

• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Base Number: 27
• Interface: Serial
• Logic: RoHS Compliant
• Package / Case: TSOP
• Memory Type: Flash - NAND
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes
• Memory Size: 1Gbit

Rev 0.2 / May. 2007
NOTE:
1. The 1st block is guaranteed to be a valid block up to 1K cycles with ECC. (1bit/528bytes)
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Symbol
V
T
the device at these or any other conditions above those indicated in the Operating sections of this specification is
Valid Block Number
T
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Vcc
IO
T
BIAS
STG
A
(2)
Parameter
Ambient Operating Temperature (Commercial Temperature Range)
Ambient Operating Temperature (Extended Temperature Range)
Ambient Operating Temperature (Industrial Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Symbol
N
VB
Table 7: Absolute maximum ratings
Table 6: Valid Blocks Number
Parameter
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
8032
Min
Typ
HY27US(08/16)1G1M Series
8192
Max
-50 to 125
-65 to 150
-0.6 to 4.6
-0.6 to 4.6
-25 to 85
-40 to 85
0 to 70
Value
3.3V
Preliminary
Blocks
Unit
Unit
℃
℃
℃
℃
℃
V
V
15