H27UF081G1M-TPCB HYNIX SEMICONDUCTOR, H27UF081G1M-TPCB Datasheet - Page 22

• Manufacturer Part Number: H27UF081G1M-TPCB
• Description: IC, MEMORY, FLASH NAND 1GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UF081G1M-TPCB

• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Base Number: 27
• Interface: Serial
• Logic: RoHS Compliant
• Package / Case: TSOP
• Memory Type: Flash - NAND
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes
• Memory Size: 1Gbit

Rev 0.2 / May. 2007
CE
RE
I/Ox
R/B
Notes : Transition is measured ±200mV from steady state voltage with load.
Figure 8: Sequential Out Cycle after Read (CLE=L, WE=H, ALE=L)
This parameter is sampled and not 100% tested.
t
t
RR
REA
t
CEA
t
RP
Dout
Figure 7. Input Data Latch Cycle
t
RC
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
t
REH
t
REA
Dout
t
RHZ
HY27US(08/16)1G1M Series
t
REA
Dout
t
t
RHZ*
OH
t
t
OH
CHZ*
Preliminary
22