PBSS4021SPN,115 NXP Semiconductors, PBSS4021SPN,115 Datasheet - Page 8

• Manufacturer Part Number: PBSS4021SPN,115
• Description: TRANS ARRAY NPN/PNP 20V 6.3A SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4021SPN,115

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 7.5A, 6.3A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 275mV @ 375mA, 7.5A / 350mV @ 325mA, 6.5A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 4A, 2V / 150 @ 4A, 2V
• Power - Max: 2.3W
• Frequency - Transition: 115MHz, 105MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-6393-2; PBSS4021SPN,115

NXP Semiconductors
PBSS4021SP
Product data sheet
Fig 9.
Fig 11. Collector-emitter saturation resistance as a
V
R
−10
−10
−10
(V)
(Ω)
CEsat
CEsat
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
10
10
10
10
−1
10
−1
−2
−3
−1
−2
−10
−10
1
3
2
I
function of collector current; typical values
I
function of collector current; typical values
Collector-emitter saturation voltage as a
C
C
−1
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 20
= 20
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
−1
−1
−10
−10
−10
−10
2
2
(1)
−10
−10
(2)
(3)
3
3
(1)
(2)
(3)
All information provided in this document is subject to legal disclaimers.
−10
−10
006aac254
006aac256
I
I
4
C
4
C
(mA)
(mA)
−10
−10
Rev. 2 — 11 October 2010
5
5
Fig 10. Collector-emitter saturation voltage as a
Fig 12. Collector-emitter saturation resistance as a
V
R
20 V, 6.3 A PNP/PNP low V
−10
−10
−10
(V)
(Ω)
CEsat
CEsat
(1) I
(2) I
(3) I
(1) I
(2) I
(3) I
10
10
10
10
−1
10
−1
−2
−3
−1
−2
−10
−10
1
3
2
T
function of collector current; typical values
T
function of collector current; typical values
C
C
C
C
C
C
−1
amb
−1
amb
/I
/I
/I
/I
/I
/I
B
B
B
B
B
B
= 100
= 50
= 10
= 100
= 50
= 10
= 25 °C
= 25 °C
−1
−1
−10
−10
(1)
(2)
(3)
(1)
(3)
−10
−10
PBSS4021SP
2
2
(2)
−10
−10
CEsat
3
3
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
−10
−10
006aac255
006aac257
I
I
4
4
C
C
(mA)
(mA)
−10
−10
5
5
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