PBSS4021SPN,115 NXP Semiconductors, PBSS4021SPN,115 Datasheet - Page 4

• Manufacturer Part Number: PBSS4021SPN,115
• Description: TRANS ARRAY NPN/PNP 20V 6.3A SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4021SPN,115

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 7.5A, 6.3A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 275mV @ 375mA, 7.5A / 350mV @ 325mA, 6.5A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 4A, 2V / 150 @ 4A, 2V
• Power - Max: 2.3W
• Frequency - Transition: 115MHz, 105MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-6393-2; PBSS4021SPN,115

NXP Semiconductors
6. Thermal characteristics
PBSS4021SP
Product data sheet
Fig 2.
Z
(K/W)
th(j-a)
10
10
10
10
−1
1
10
3
2
FR4 PCB, standard footprint
typical values
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
−5
0
0.1
duty cycle = 1
0.75
0.33
0.02
10
0.05
0.01
0.5
0.2
−4
Table 7.
[1]
[2]
[3]
Symbol
Per transistor
R
R
Per device
R
th(j-a)
th(j-sp)
th(j-a)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
10
−3
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
Thermal characteristics
All information provided in this document is subject to legal disclaimers.
10
−2
Rev. 2 — 11 October 2010
10
−1
2
O
3
, standard footprint.
20 V, 6.3 A PNP/PNP low V
Conditions
in free air
in free air
1
10
[1]
[2]
[3]
[1]
[2]
[3]
Min
-
-
-
-
-
-
-
PBSS4021SP
CEsat
10
Typ
-
-
-
-
-
-
-
2
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
t
p
006aac247
(s)
Max
170
125
75
40
145
90
55
10
3
2
.
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
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