PBSS4021SPN,115 NXP Semiconductors, PBSS4021SPN,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS4021SPN,115
• Description: TRANS ARRAY NPN/PNP 20V 6.3A SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4021SPN,115

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 7.5A, 6.3A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 275mV @ 375mA, 7.5A / 350mV @ 325mA, 6.5A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 4A, 2V / 150 @ 4A, 2V
• Power - Max: 2.3W
• Frequency - Transition: 115MHz, 105MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-6393-2; PBSS4021SPN,115

NXP Semiconductors
7. Characteristics
PBSS4021SP
Product data sheet
Table 8.
T
[1]
Symbol Parameter
Per transistor
I
I
I
h
V
R
V
t
t
t
t
t
t
f
C
V
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
collector-base
cut-off current
collector-emitter
cut-off current
emitter-base
cut-off current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter
turn-on voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
C unless otherwise specified.
Characteristics
p
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 11 October 2010
V
Conditions
V
V
T
V
V
V
I
I
I
I
I
I
I
I
I
V
V
I
f = 100 MHz
f = 1 MHz
C
C
C
C
C
C
C
C
C
Bon
j
CB
CB
CE
EB
CE
CE
CC
CE
CB
I
I
I
I
I
= 150 °C
= −1 A; I
= −1 A; I
= −2 A; I
= −4 A; I
= −4 A; I
= −6.5 A; I
= −5 A; I
= −1 A; I
= −4 A; I
C
C
C
C
C
= −0.05 A; I
= −20 V; I
= −20 V; I
= −16 V; V
= −5 V; I
= −2 V
= −2 V; I
= −10 V; I
= −10 V; I
= −12.5 V; I
= −500 mA
= −1 A
= −2 A
= −4 A
= −7 A
20 V, 6.3 A PNP/PNP low V
B
B
B
B
B
B
B
B
C
= −50 mA
= −10 mA
= −40 mA
= −200 mA
= −40 mA
B
= −500 mA
= −100 mA
= −400 mA
C
E
E
C
E
= 0 A
= −325 mA
= −2 A
BE
Boff
= 0 A
= 0 A;
= −100 mA;
= i
C
= 0 V
= −1 A;
e
= 0.05 A
= 0 A;
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
250
250
200
150
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS4021SP
CEsat
400
95
340
85
425
Typ
-
-
-
-
400
350
300
200
−45
−70
−100
−150
−250
−235
36
−0.85
−1
−0.76
40
55
105
95
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
Max
−100
−50
−100
−100
-
-
-
-
-
−68
−115
−150
−225
−375
−350
54
−1
−1.2
−0.85
-
-
-
-
-
-
-
-
6 of 15
ns
ns
ns
Unit
nA
μA
nA
nA
mV
mV
mV
mV
mV
mV
mΩ
V
V
V
ns
ns
ns
MHz
pF