PBSS4021SPN,115 NXP Semiconductors, PBSS4021SPN,115 Datasheet - Page 5

• Manufacturer Part Number: PBSS4021SPN,115
• Description: TRANS ARRAY NPN/PNP 20V 6.3A SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4021SPN,115

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 7.5A, 6.3A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 275mV @ 375mA, 7.5A / 350mV @ 325mA, 6.5A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 4A, 2V / 150 @ 4A, 2V
• Power - Max: 2.3W
• Frequency - Transition: 115MHz, 105MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-6393-2; PBSS4021SPN,115

NXP Semiconductors
PBSS4021SP
Product data sheet
Fig 3.
Fig 4.
Z
Z
(K/W)
(K/W)
th(j-a)
th(j-a)
10
10
10
10
10
10
10
−1
−1
1
1
10
10
3
2
2
FR4 PCB, mounting pad for collector 1 cm
typical values
Ceramic PCB, Al
typical values
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
−5
−5
0
0
0.33
0.1
0.02
0.1
duty cycle = 1
0.75
duty cycle = 1
0.75
0.33
0.02
0.05
0.01
0.05
0.01
10
10
0.5
0.2
0.5
0.2
−4
−4
2
O
3
, standard footprint
10
10
−3
−3
All information provided in this document is subject to legal disclaimers.
10
10
2
−2
−2
Rev. 2 — 11 October 2010
10
10
−1
−1
20 V, 6.3 A PNP/PNP low V
1
1
10
10
PBSS4021SP
CEsat
10
10
2
2
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
t
t
p
p
006aac248
006aac249
(s)
(s)
10
10
3
3
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