PBSS4021SPN,115 NXP Semiconductors, PBSS4021SPN,115 Datasheet - Page 7

• Manufacturer Part Number: PBSS4021SPN,115
• Description: TRANS ARRAY NPN/PNP 20V 6.3A SO8
• Manufacturer: NXP Semiconductors

Specifications of PBSS4021SPN,115

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 7.5A, 6.3A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 275mV @ 375mA, 7.5A / 350mV @ 325mA, 6.5A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 4A, 2V / 150 @ 4A, 2V
• Power - Max: 2.3W
• Frequency - Transition: 115MHz, 105MHz
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-6393-2; PBSS4021SPN,115

NXP Semiconductors
PBSS4021SP
Product data sheet
Fig 5.
Fig 7.
h
V
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
−1.4
BE
−1.0
−0.6
−0.2
600
400
200
−10
−10
0
V
DC current gain as a function of collector
current; typical values
V
current; typical values
Base-emitter voltage as a function of collector
−1
−1
amb
amb
amb
amb
amb
amb
CE
CE
= −2 V
= −2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1
(1)
(2)
(3)
−10
−10
(1)
(2)
(3)
−10
−10
2
2
−10
−10
3
3
All information provided in this document is subject to legal disclaimers.
−10
−10
006aac250
006aac252
I
I
4
C
4
C
(mA)
(mA)
−10
−10
Rev. 2 — 11 October 2010
5
5
Fig 6.
Fig 8.
V
20 V, 6.3 A PNP/PNP low V
(V)
−16.0
(A)
−12.0
BEsat
I
(1) T
(2) T
(3) T
C
−8.0
−4.0
−1.4
−1.0
−0.6
−0.2
0.0
−10
0.0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
C
amb
−1
amb
amb
amb
/I
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
−1
−1.0
−10
−2.0
−10
I
(1)
(2)
(3)
B
PBSS4021SP
(mA) = −200
2
−3.0
−10
CEsat
−160
−120
−80
−40
3
−4.0
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
−10
−180
−140
−100
006aac251
006aac253
V
−60
−20
I
4
CE
C
(mA)
(V)
−10
−5.0
5
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