BSZ0901NS Infineon Technologies, BSZ0901NS Datasheet - Page 85
![MOSFET N-CH 30V S308](/photos/39/68/396873/s308_sml.jpg)
BSZ0901NS
Manufacturer Part Number
BSZ0901NS
Description
MOSFET N-CH 30V S308
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSZ0901NS.pdf
(148 pages)
Specifications of BSZ0901NS
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 mOhms
Drain-source Breakdown Voltage
30 V
Mounting Style
SMD/SMT
Package / Case
S308
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSZ0901NSTR
SP000854570
SP000854570
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSZ0901NS
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSZ0901NSI
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSZ0901NSIATMA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Discretes IGBT and Emitter Controlled Diodes
Company
I
S
Device
D
K
H
G
L
Package Type
A
B
H
D
P
U
W
Nominal Current
(@ 100°C) [A]
Technology
N
P
T
E
S
Nominal Voltage
Divided by 10 (120 x 10 = 1200V)
–
HS
H
H3
T
T2
R
R2
R3
A
Generation
= Infineon
= Formerly Siemens
= Diode
= Duo Pack (normal drives)
= Reverse Conducting,
= Single IGBT
= LightMOS
= TO-220 FullPAK
= TO-263 (D
= TO-220 real 2pin
= TO-252 (DPAK)
= TO-220
= TO-251 (IPAK)
= TO-247
= N-Channel
= P-Channel
= TRENCHSTOP
= Emitter Controlled Diodes (for diode only)
= SiC (for diode only)
= Fast IGBT (~20kHz)
= HighSpeed (600V) (~80kHz)
= HighSpeed (1200V) (~80kHz)
= HighSpeed Drives
= TRENCHSTOP
= TRENCHSTOP
= Reverse Conducting-Drives
= Reverse Conducting Second Generation
= Reverse Conducting for Heating Genereation 3
= Automotive
Integrated Diode
(for induction heating)
(RC IGBT developed for lamp ballast)
2
PAK)
TM
TM
TM
(only 1200V)
(IGBT3)
Generation 2 (IGBT4/Emitter Controlled Diodes 4)
I
K
W
03
N
120
H
2
85