BSZ0901NS Infineon Technologies, BSZ0901NS Datasheet - Page 85

• Manufacturer Part Number: BSZ0901NS
• Description: MOSFET N-CH 30V S308
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSZ0901NS

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Mounting Style: SMD/SMT
• Package / Case: S308
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSZ0901NSTR; SP000854570

Discretes IGBT and Emitter Controlled Diodes
Company
I
S
Device
D
K
H
G
L
Package Type
A
B
H
D
P
U
W
Nominal Current
(@ 100°C) [A]
Technology
N
P
T
E
S
Nominal Voltage
Divided by 10 (120 x 10 = 1200V)
–
HS
H
H3
T
T2
R
R2
R3
A
Generation
= Infineon
= Formerly Siemens
= Diode
= Duo Pack (normal drives)
= Reverse Conducting,
= Single IGBT
= LightMOS
= TO-220 FullPAK
= TO-263 (D
= TO-220 real 2pin
= TO-252 (DPAK)
= TO-220
= TO-251 (IPAK)
= TO-247
= N-Channel
= P-Channel
= TRENCHSTOP
= Emitter Controlled Diodes (for diode only)
= SiC (for diode only)
= Fast IGBT (~20kHz)
= HighSpeed (600V) (~80kHz)
= HighSpeed (1200V) (~80kHz)
= HighSpeed Drives
= TRENCHSTOP
= TRENCHSTOP
= Reverse Conducting-Drives
= Reverse Conducting Second Generation
= Reverse Conducting for Heating Genereation 3
= Automotive
Integrated Diode
(for induction heating)
(RC IGBT developed for lamp ballast)
2
PAK)
TM
TM
TM
(only 1200V)
(IGBT3)
Generation 2 (IGBT4/Emitter Controlled Diodes 4)
I
K
W
03
N
120
H
2
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