BSZ0901NS Infineon Technologies, BSZ0901NS Datasheet - Page 42

• Manufacturer Part Number: BSZ0901NS
• Description: MOSFET N-CH 30V S308
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSZ0901NS

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Mounting Style: SMD/SMT
• Package / Case: S308
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSZ0901NSTR; SP000854570

42
MoSFETs
To-220 FullPaK
1) Coming soon
voltage
100v
150v
500v
600v
60v
80v
R
DS(on)
@ V
(max.) [mΩ]
10.0
12.6
18.0
10.5
GS
140
190
199
250
280
299
350
380
399
520
600
950
125
125
160
165
190
190
199
220
250
280
280
299
330
3.2
5.7
9.3
2.8
3.7
5.7
3.0
4.5
8.6
99
= 10v
2.0 … 4.0
2.0 … 4.0
2.0 … 4.0
2.0 … 3.5
2.0 … 3.5
2.0 … 3.5
2.0 … 3.5
2.0 … 3.5
2.0 … 3.5
2.0 … 3.5
2.0 … 3.5
2.0 … 3.5
2.0 … 4.0
2.5 … 3.5
2.1 … 3.9
2.5 … 3.5
2.5 … 3.5
2.1 … 3.9
2.5 … 3.5
2.5 … 3.5
2.1 … 3.9
2.5 … 3.5
2.5 … 3.5
2.1 … 3.9
2.1 … 3.9
2.5 … 3.5
2.5 … 3.5
2.5 … 3.5
2.5 … 3.5
2.5 … 3.5
2.1 … 3.9
2.5 … 3.5
2.5 … 3.5
3.0 … 5.0
2.5 … 3.5
2.1 … 3.9
2.5 … 3.5
2.5 … 3.5
3.0 … 5.0
V
[v]
GS(th)
23.0
21.0
17.0
13.0
16.0
12.0
10.0
11.6
38.0
25.0
30.0
23.8
21.0
20.7
20.2
16.0
20.7
12.0
15.0
13.8
11.0
13.4
9.0
7.1
7.6
4.5
[a]
84
60
43
89
75
60
40
79
64
45
35
28
37
I
D
Q
119.0
g
96.0
75.0
58.0
43.0
[nC]
124
155
155
(typ.)
61
36
88
52
26
88
42
26
19
41
48
95
34
27
66
23
19
49
17
13
32
22
53
39
87
33
95
26
63
22
63
IPa032n06n3 G
IPa057n06n3 G
IPa093n06n3 G
IPa028n08n3 G
IPa037n08n3 G
IPa057n08n3 G
IPa100n08n3 G
IPa030n10n3 G
IPa045n10n3 G
IPa086n10n3 G
IPa126n10n3 G
IPa180n10n3 G
IPa105n15n3 G
IPa50r140CP
SPa21n50C3
IPa50r199CP
IPa50r250CP
SPa16n50C3
IPa50r299CP
IPa50r350CP
SPa12n50C3
IPa50r399CP
IPa50r520CP
SPa08n50C3
SPa04n50C3
IPa60r099C6
IPa60r125CP
IPa60r125C6
IPa60r160C6
IPa60r165CP
SPa20n60C3
IPa60r190C6
IPa60r199CP
SPa20n60CFD
IPa60r250CP
SPa15n60C3
IPa60r280C6
IPa60r299CP
SPa15n60CFD
Type
1)
1)
1)
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
CoolMoS
Technology
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
CP
C3
CP
CP
C3
CP
CP
C3
CP
CP
C3
C3
C6
CP
C6
C6
CP
C3
C6
CP
CFD
CP
C3
C6
CP
CFD