BSZ0901NS Infineon Technologies, BSZ0901NS Datasheet - Page 59

• Manufacturer Part Number: BSZ0901NS
• Description: MOSFET N-CH 30V S308
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSZ0901NS

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Mounting Style: SMD/SMT
• Package / Case: S308
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSZ0901NSTR; SP000854570

SuperSo8
SuperSo8 dual
1) Mobile Series: optimized for 4.5v gate charge
voltage
voltage
100v
120v
150v
200v
250v
100v
30v
@ V
@ V
10.0
10.5
11.8
12.3
15.2
15.9
16.0
19.6
20.5
25.2
26.5
44.0
75.0
19.0
53.0
GS
15.0
GS
6.0
7.9
8.2
7.7
R
7.2
32
60
R
75
DS(on)
= 10v @ V
DS(on)
= 10v @ V
(max.) [mΩ]
(max.) [mΩ]
GS
11.0
14.1
16.6
21.5
28.0
36.0
GS
22.0
9.4
= 4.5v
= 4.5v
2.0 ... 3.5
2.0 ... 3.5
2.0 ... 4.0
2.0 ... 4.0
2.0 ... 4.0
2.0 … 3.5
2.0 … 4.0
1.2 … 2.4
2.0 … 4.0
1.2 … 2.4
2.0 … 4.0
1.2 … 2.4
2.0 … 4.0
1.2 … 2.4
2.0 … 4.0
1.2 … 2.4
2.0 … 4.0
1.2 … 2.4
2.0 … 4.0
2.0 … 6.0
2.0 … 4.0
1.0 … 2.2
1.0 … 2.2
2.0 … 4.0
V
V
[v]
GS(th)
[v]
GS(th)
100
100
[a]
90
90
90
71
71
63
63
42
45
45
40
40
18
13
93
50
23
36
25
[a]
20
20
13
I
I
D
D
Q
Q
g
23.0
g
[nC]
15.0
8.7
[nC]
4.8
(typ.)
51
66
78
33
40
42
51
22
26
19
25
31
13
16
66
22
22
(typ.)
8
8
BSC060n10nS3 G
BSC079n10nS G
BSC082n10LS G
BSC100n10nSF G
BSC105n10LSF G
BSC118n10nS G
BSC123n10LS G
BSC152n10nSF G
BSC159n10LSF G
BSC160n10nS3 G
BSC196n10nS G
BSC205n10LS G
BSC252n10nSF G
BSC265n10LSF G
BSC440n10nS3 G
BSC750n10nD G
BSC077n12nS3 G
BSC190n15nS3 G
BSC530n15nS3 G
BSC320n20nS3 G
BSC600n25nS3 G
BSC072n03LD G
BSC150n03LD G
BSC750n10nD G
Type
Type
1)
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
Technology
Technology
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
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