BSZ0901NS Infineon Technologies, BSZ0901NS Datasheet - Page 44

• Manufacturer Part Number: BSZ0901NS
• Description: MOSFET N-CH 30V S308
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSZ0901NS

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Mounting Style: SMD/SMT
• Package / Case: S308
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSZ0901NSTR; SP000854570

44
MoSFETs
D
D
voltage
voltage
100v
150v
2
2
-60v
30v
30v
40v
60v
80v
PaK 7pin (To-263 7pin)
PaK (To-263)
@ V
@ V
130.0
300.0
23.0
0.95
11.4
14.7
0.95
GS
GS
3.4
5.5
6.0
6.5
8.0
9.6
1.1
1.1
2.0
1.6
1.7
2.3
3.4
1.9
3.0
2.5
3.9
6.9
6.5
R
R
DS(on)
DS(on)
= 10v @ V
= 10v @ V
(max.) [mΩ]
(max.) [mΩ]
GS
11.9
14.1
11.1
21.7
GS
1.3
4.7
7.8
4.2
9.5
1.3
1.4
2.7
= 4.5v
= 4.5v
-4.0 … -2.1
-4.0 … -2.1
-4.0 … -2.1
1.0 … 2.2
1.2 … 2.0
1.2 … 2.0
1.2 … 2.0
1.2 … 2.0
1.2 … 2.0
1.2 … 2.0
1.0 … 2.2
1.2 … 2.0
2.0 ... 4.0
1.0 … 2.1
1.2 … 2.0
2.0 … 4.0
2.0 … 4.0
1.2 … 2.2
2.0 … 4.0
2.0 … 4.0
2.0 … 4.0
2.0 … 3.5
2.0 … 3.5
2.0 … 3.5
2.0 … 3.5
V
V
[v]
[v]
GS(th)
GS(th)
-80.0
-18.6
-8.8
180
180
180
180
140
180
180
140
100
180
160
180
160
130
tbd
[a]
80
50
70
50
50
35
30
20
[a]
I
I
D
D
Q
Q
g
g
-115
[nC]
110
[nC]
227
260
188
125
206
149
155
155
-22
-10
25
15
18
11
66
(typ.)
(typ.)
90
98
88
88
70
9
7
5
SPB80P06P G
SPB18P06P G
SPB08P06P G
IPB009n03L G
IPB034n03L G
IPB055n03L G
IPB042n03L G
IPB065n03L G
IPB080n03L G
IPB096n03L G
IPB114n03L G
IPB147n03L G
IPB009n03L G
IPB011n04L G
IPB011n04n G
IPB020n04n G
IPB016n06L3 G
IPB017n06n3 G
IPB023n06n3 G
IPB034n06n3 G
IPB019n08n3 G
IPB030n08n3 G
IPB025n10n3 G
IPB039n10n3 G
IPB069n10n3 G
IPB065n15n3 G
Type
Type
planar
planar
planar
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
optiMoS
Technology
Technology
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM