BSZ0901NS Infineon Technologies, BSZ0901NS Datasheet - Page 67

• Manufacturer Part Number: BSZ0901NS
• Description: MOSFET N-CH 30V S308
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSZ0901NS

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Mounting Style: SMD/SMT
• Package / Case: S308
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSZ0901NSTR; SP000854570

Silicon Carbide High voltage Schottky Diodes
To-220 with decapped middle leg
To-220 real 2pin
voltage
voltage
1200v
600v
600v
I
I
F
F
10
12
10
12
16
10
10
12
10
15
4
5
6
8
2
3
4
5
6
8
4
6
8
3
4
5
6
8
9
2
5
8
[a]
[a]
Q
Q
C
C
(typ.) [nC]
(typ.) [nC]
13.0
14.0
21.0
24.0
29.0
30.0
12.0
15.0
19.0
24.0
30.0
38.0
12.0
15.0
16.0
19.0
3.2
5.0
8.0
3.2
4.5
6.0
8.0
15
19
24
18
27
36
54
8
7
I
I
118.0
F.SM
F.SM
12.5
18.5
21.5
26.0
31.0
36.0
11.5
16.0
32.0
42.0
49.0
59.0
84.0
98.0
11.5
18.0
26.0
32.0
42.0
49.0
51.0
59.0
32
49
59
84
14
29
39
58
78
[a]
[a]
SDT04S60
SDT05S60
SDT06S60
SDT08S60
SDT10S60
SDT12S60
IDT02S60C
IDT03S60C
IDT04S60C
IDT05S60C
IDT06S60C
IDT08S60C
IDT10S60C
IDT12S60C
IDT16S60C
IDH04S60C
IDH06S60C
IDH08S60C
IDH10S60C
IDH03SG60C
IDH04SG60C
IDH05SG60C
IDH06SG60C
IDH08SG60C
IDH09SG60C
IDH10SG60C
IDH12SG60C
IDH02SG120
IDH05S120
IDH08S120
IDH10S120
IDH15S120
Type
Type
thinQ!
thinQ!
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thinQ!
thinQ!
thinQ!
thinQ!
thinQ!
thinQ!
thinQ!
thinQ!
thinQ!
thinQ!
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thinQ!
thinQ!
thinQ!
thinQ!
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thinQ!
thinQ!
thinQ!
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Technology
Technology
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
TM
2G
2G
2G
2G
2G
2G
2G
2G
2G
2G
2G
2G
2G
3G
3G
3G
3G
3G
3G
3G
3G
3G
3G
3G
3G
3G
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