BSZ0901NS Infineon Technologies, BSZ0901NS Datasheet - Page 83

• Manufacturer Part Number: BSZ0901NS
• Description: MOSFET N-CH 30V S308
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSZ0901NS

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Mounting Style: SMD/SMT
• Package / Case: S308
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSZ0901NSTR; SP000854570

thinQ!
thinQ!
Company
S = Formerly Siemens
Device
D = Diode
Package Type
D = DPAK (TO-252)
T = TO-220 (2pin)
Company
I = Infineon
Device
D = Diode
Package Type
D = DPAK (TO-252)
T = TO-220 (2pin)
TM
TM
2G
S
I
D
D
T
Continuous Drain Current
(@ T
T
C
= 25°C) [A]
12
12
S
S
60
60
Breakdown Voltage
Divided by 10 (60 x 10 = 600V)
Technology
S = SiC Diode
Continuous Drain Current
(@ T
C
C
= 25°C) [A]
Specifications
C = Surge current stable
Breakdown Voltage
Divided by 10
(60 x 10 = 600V)
Technology
S = SiC Diode
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