BSZ0901NS Infineon Technologies, BSZ0901NS Datasheet - Page 83
![MOSFET N-CH 30V S308](/photos/39/68/396873/s308_sml.jpg)
BSZ0901NS
Manufacturer Part Number
BSZ0901NS
Description
MOSFET N-CH 30V S308
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSZ0901NS.pdf
(148 pages)
Specifications of BSZ0901NS
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 mOhms
Drain-source Breakdown Voltage
30 V
Mounting Style
SMD/SMT
Package / Case
S308
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSZ0901NSTR
SP000854570
SP000854570
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSZ0901NS
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSZ0901NSI
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
BSZ0901NSIATMA1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
thinQ!
thinQ!
Company
S = Formerly Siemens
Device
D = Diode
Package Type
D = DPAK (TO-252)
T = TO-220 (2pin)
Company
I = Infineon
Device
D = Diode
Package Type
D = DPAK (TO-252)
T = TO-220 (2pin)
TM
TM
2G
S
I
D
D
T
Continuous Drain Current
(@ T
T
C
= 25°C) [A]
12
12
S
S
60
60
Breakdown Voltage
Divided by 10 (60 x 10 = 600V)
Technology
S = SiC Diode
Continuous Drain Current
(@ T
C
C
= 25°C) [A]
Specifications
C = Surge current stable
Breakdown Voltage
Divided by 10
(60 x 10 = 600V)
Technology
S = SiC Diode
83