FDMC86102L Fairchild Semiconductor, FDMC86102L Datasheet - Page 3

• Manufacturer Part Number: FDMC86102L
• Description: MOSFET N-CH 100V 18A LL POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC86102L

• Input Capacitance (ciss) @ Vds: 1300pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Power - Max: 2.3W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 mOhms
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 100 V
• Continuous Drain Current: 18 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC86102L Rev.C
Typical Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
30
25
20
15
10
Figure 3. Normalized On Resistance
5
0
5
0
Figure 1.
1.0
-75
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
-50
= 7 A
vs Junction Temperature
= 5 V
V
= 10 V
1.5
DS
V
T
V
1
GS
,
-25
J
GS
On Region Characteristics
V
DRAIN TO SOURCE VOLTAGE (V)
,
V
GS
JUNCTION TEMPERATURE (
= 3.5 V
, GATE TO SOURCE VOLTAGE (V)
GS
V
= 4 V
2.0
GS
= 4.5 V
0
= 10 V
2
T
25
J
μ
= 150
s
2.5
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
o
J
3
C
= 25 °C unless otherwise noted
3.0
75
T
J
o
100 125 150
= -55
C )
T
4
J
3.5
V
= 25
GS
o
C
= 3 V
μ
o
s
C
4.0
5
3
0.001
0.01
120
0.1
30
10
90
60
30
1
5
4
3
2
1
0
0
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
= 0 V
V
GS
0.2
SD
5
T
, BODY DIODE FORWARD VOLTAGE (V)
= 3 V
Normalized On-Resistance
V
J
On-Resistance vs Gate to
GS
= 150
I
Source Voltage
D
4
Source to Drain Diode
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
I
T
D
V
0.4
10
J
o
GS
= 7 A
= 25
C
= 4 V
o
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
0.6
15
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
T
GS
J
V
= 125
= 4.5 V
GS
T
0.8
20
= 3.5 V
J
o
= -55
C
T
J
8
= 25
V
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o
GS
C
1.0
25
o
= 10 V
C
μ
s
μ
s
1.2
30
10