FDMC86102L Fairchild Semiconductor, FDMC86102L Datasheet

MOSFET N-CH 100V 18A LL POWER33

FDMC86102L

Manufacturer Part Number
FDMC86102L
Description
MOSFET N-CH 100V 18A LL POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC86102L

Input Capacitance (ciss) @ Vds
1300pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
23 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Power - Max
2.3W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
23 mOhms
Forward Transconductance Gfs (max / Min)
26 S
Drain-source Breakdown Voltage
100 V
Continuous Drain Current
18 A
Power Dissipation
41 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2010 Fairchild Semiconductor Corporation
FDMC86102L Rev.C
FDMC86102L
N-Channel Power Trench
100 V, 18 A, 23 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
Low Profile - 1 mm max in Power 33
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC86102L
DS(on)
DS(on)
= 23 mΩ at V
= 34 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
MLP 3.3x3.3
GS
GS
= 10 V, I
= 4.5 V, I
FDMC86102L
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
Pin 1
= 7 A
= 5.5 A
T
A
®
= 25 °C unless otherwise noted
S
S
Parameter
MOSFET
S
G
Bottom
Power 33
Package
1
D
T
T
T
T
T
D
General Description
This
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
C
C
A
C
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
DC - DC Conversion
D
= 25 °C
D
N-Channel
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 3)
MOSFET
5
6
7
8
Tape Width
12 mm
is
-55 to +150
Ratings
produced using Fairchild
100
±20
2.3
53
18
30
30
63
41
7
3
®
process that has
December 2010
www.fairchildsemi.com
3000 units
1
4
3
2
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

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FDMC86102L Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC86102L FDMC86102L ©2010 Fairchild Semiconductor Corporation FDMC86102L Rev.C ® MOSFET General Description = 7 A This N-Channel D Semiconductor‘s advanced Power Trench = 5 been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting N- ©2010 Fairchild Semiconductor Corporation FDMC86102L Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C I ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On Resistance vs Junction Temperature 30 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.0 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC86102L Rev °C unless otherwise noted μ 120 100 125 150 ...

Page 4

... Switching Capability THIS AREA IS LIMITED SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC86102L Rev °C unless otherwise noted J 2000 1000 100 100 Figure 10. 1000 100 us 100 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. ©2010 Fairchild Semiconductor Corporation FDMC86102L Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC86102L Rev.C 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMC86102L Rev.C ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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