FDMC86244 Fairchild Semiconductor, FDMC86244 Datasheet - Page 4

• Manufacturer Part Number: FDMC86244
• Description: MOSFET N-CH 150V 15A LL POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC86244

• Input Capacitance (ciss) @ Vds: 345pF @ 75V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 134 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5.9nC @ 10V
• Power - Max: 2.3W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 134 mOhms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 150 V
• Continuous Drain Current: 15 A
• Power Dissipation: 26 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC86244 Rev.C
Typical Characteristics
0.001
10
10
0.01
8
6
4
2
1
0.001
8
6
4
2
0
0.1
Figure 7.
20
10
0
1
0.1
I
D
Figure 9.
THIS AREA IS
LIMITED BY r
= 2.8 A
Figure 11. Forward Bias Safe
1
Switching Capability
V
t
Gate Charge Characteristics
AV
DS
SINGLE PULSE
T
R
T
J
A
θ
Operating Area
0.01
, DRAIN to SOURCE VOLTAGE (V)
, TIME IN AVALANCHE (ms)
Q
Unclamped Inductive
JA
= MAX RATED
= 25
1
DS(on)
g
, GATE CHARGE (nC)
= 125
V
DD
o
C
2
= 75 V
o
C/W
T
J
V
T
= 125
DD
J
10
= 25
= 50 V
V
T
0.1
3
DD
J
o
C
= 25 °C unless otherwise noted
o
= 100 V
C
T
J
= 100
4
100
o
C
1
100
1 ms
100 ms
DC
10 ms
1 s
10 s
μ
5
2
s
500
4
1000
1000
100
10
0.5
100
10
8
6
4
2
0
Figure 10.
10
1
25
10
1
0.1
Figure 12.
-4
Figure 8.
f = 1 MHz
V
Current vs Case Temperature
SINGLE PULSE
R
T
GS
A
θ
JA
10
= 25
= 0 V
= 125
-3
50
V
o
DS
Maximum Continuous Drain
Power Dissipation
to Source Voltage
C
T
, DRAIN TO SOURCE VOLTAGE (V)
C
o
10
,
Single Pulse Maximum
Capacitance vs Drain
C/W
CASE TEMPERATURE (
V
t, PULSE WIDTH (sec)
-2
GS
1
= 6 V
75
10
-1
V
100
1
GS
= 10 V
10
R
10
θ
o
JC
C )
125
= 4.7
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100
C
o
C
C
C/W
oss
iss
rss
150
1000
100