FDMC86244 Fairchild Semiconductor, FDMC86244 Datasheet - Page 2

• Manufacturer Part Number: FDMC86244
• Description: MOSFET N-CH 150V 15A LL POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC86244

• Input Capacitance (ciss) @ Vds: 345pF @ 75V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 134 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 5.9nC @ 10V
• Power - Max: 2.3W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 134 mOhms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 150 V
• Continuous Drain Current: 15 A
• Power Dissipation: 26 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC86244 Rev.C
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
the user's board design.
GS(th)
iss
oss
rss
g
SD
ΔT
ΔT
g(TOT)
g(TOT)
gs
gd
rr
Symbol
θJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
J
= 25
°
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C; N-ch: L = 1.0 mH, I
Parameter
AS
= 5.0 A, V
DD
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 135 V, V
= 25 °C unless otherwise noted
a.
53 °C/W when mounted on a
1 in
2
pad of 2 oz copper
GS
= 10 V.
I
I
V
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
V
V
V
V
I
D
D
D
F
DS
GS
GS
GS
GS
GS
DD
DS
DD
GS
GS
GS
GS
GS
= 250 μA, V
= 250 μA, referenced to 25 °C
= 250 μA, referenced to 25 °C
= 2.8 A, di/dt = 100 A/μs
= 120 V, V
= 10 V, I
= ±20 V, V
= V
= 10 V, I
= 6 V, I
= 10 V, I
= 75 V, V
= 0 V to 10 V
= 0 V to 5 V
= 75 V, I
= 10 V, R
= 0 V, I
= 0 V, I
DS
2
Test Conditions
, I
S
S
D
D
D
D
D
D
= 2.8 A
= 2 A
= 2.4 A
GS
GS
GEN
= 250 μA
GS
DS
= 2.8 A, T
= 2.8 A,
= 2.8 A
= 2.8 A
= 0 V,
= 0 V
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 2.8 A
= 75 V,
J
= 125 °C
(Note 2)
(Note 2)
θJC
is guaranteed by design while R
Min
150
2
b.
125 °C/W when mounted on
a minimum pad of 2 oz copper
0.81
0.79
105
120
199
Typ
106
257
2.6
5.3
1.5
9.9
2.3
4.2
2.4
1.1
1.0
1.8
1.3
48
38
32
-9
8
θCA
±100
Max
345
134
186
254
5.9
3.4
1.3
1.2
45
11
10
20
10
76
61
www.fairchildsemi.com
5
1
4
is determined by
mV/°C
mV/°C
Units
mΩ
μA
pF
pF
pF
nC
nC
nC
nC
nA
ns
ns
ns
ns
ns
Ω
V
V
S
V