FDMS7676 Fairchild Semiconductor, FDMS7676 Datasheet - Page 5

• Manufacturer Part Number: FDMS7676
• Description: MOSFET N-CH 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS7676

• Input Capacitance (ciss) @ Vds: 2960pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.4 mOhms
• Forward Transconductance Gfs (max / Min): 64 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 28 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 4 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7676 Rev. A
Typical Characteristics
Figure 14.
20
16
12
-4
0.001
8
4
0
0.01
0
0.1
D
2
1
10
-4
25
Body Diode Reverse Recovery
DUTY CYCLE-DESCENDING ORDER
D = 0.5
Characteristics
0.2
0.1
0.05
0.02
0.01
Figure 13.
50
di/dt = 300 A/ s
10
-3
TIMES (nS)
75
SINGLE PULSE
R
T
Junction-to-Ambient Transient Thermal Response Curve
J
JA
= 25 °C unless otherwise noted
100
= 125
10
o
-2
C/W
125
t, RECTANGULAR PULSE DURATION (sec)
150
10
-1
5
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
Figure 15.
= P
DM
x Z
P
JA
DM
1
/t
x R
2
100
JA
t
1
+ T
t
2
A
www.fairchildsemi.com
1000